Publication:
Nanoscale charge density and dynamics in graphene oxide

Loading...
Thumbnail Image
Date
2021-11-22
relationships.isAuthorOfPublication
relationships.isSecondaryAuthorOf
relationships.isDirectorOf
Authors
Palacios-Lidon, Elisa ; Colchero, Jaime ; Ortuño, Miguel ; Colom, Eduardo ; Benito, Ana M. ; Maser, Wolfgang ; Somoza, Andres M.
item.page.secondaryauthor
item.page.director
Publisher
ACS Publications
publication.page.editor
publication.page.department
DOI
https://doi.org/10.1021/acsmaterialslett.1c00550
item.page.type
info:eu-repo/semantics/annotation
Description
©2021. This manuscript version is made available under the CC-BY 4.0 license http://creativecommons.org/licenses/by/4.0/ This document is the Published version of a Published Work that appeared in final form in Materials Letters. To access the final edited and published work see https://doi.org/10.1021/acsmaterialslett.1c00550
Abstract
Graphene oxide (GO) is widely used as a component in thin film optoelectronic device structures for practical reasons because its electronic and optical properties can be controlled. Progress critically depends on elucidating the nanoscale electronic structure of GO. However, direct experimental access is challenging because of its disordered and nonconductive character. Here, we quantitatively mapped the nanoscopic charge distribution and charge dynamics of an individual GO sheet by using Kelvin probe force microscopy (KPFM). Charge domains are identified, presenting important charge interactions below distances of 20 nm. Charge dynamics with very long relaxation times of at least several hours and a logarithmic decay of the time correlation function are in excellent agreement with Monte Carlo simulations, revealing an universal hopping transport mechanism best described by Efros–Shklovskii’s law.
Citation
Materials Letters 3(12): 1826-1831 (2021)
item.page.embargo
Collections